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 U2510B
All-Band AM/FM Receiver and Audio Amplifier
Description
The U2510B is an integrated bipolar one-chip AM/FM radio circuit. It contains an FM front end with preamplifier, FM IF and demodulator, a complete AM receiver, an AF amplifier and a mode switch for AM, FM and tape. This circuit is designed for clock radios and portable radio-cassette recorders.
Features
D Superior FM strong signal behavior by using RF AGC D Soft mute and HCC for decreasing interstation noise
in FM mode
D Excellent AFC performance (level controlled, both
polarities available)
D Level indicator (LED drive) for AM and FM
D D D D D D
DC mode control: AM, FM and tape Wide supply-voltage range and low quiescent current High AF output power: 1 W Electronic volume control Electronic AF bandwidth control (treble and high cut) Output stage for headphone and speaker drive
Block Diagram
FM RF tank FM ant. VS 9 8 7 AFC FM RF BPE AGC 12 FM front end FM AGC AM front end RF AGC Voltage stab. AM/FM and mode control 15 21 13 20 19 1 22 IF AGC AM AGC AFC control AM IF amp. and detect. IF Level indic. AF preamp. Volume Mute HCC 18 FM IF amp. FM discr. Power amp. 25 23 24 4 6 14 16 2 26 28 27 3 FM osc. tank IF BPE (Replaceable)
11
AM ant. AM osc. tank
10
5
VRef
AM
S2
VS AFC mode
LED VS Treble Vol
13912
FM Tape
Figure 1. Block diagram
TEMIC Semiconductor Rev. A1, 06-Apr-98
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U2510B
Order Information
Extended Type Number U2510B-M U2510B-M__T Package SDIP28 SDIP28
Pin 5 28 AF-GND 6
Remarks VS < 6 V supply voltage
Function AM oscillator tank circuit input, recommended load impedance approximately 2.5 kW FM-AFC AFC diode connection, coupling capacitor (C19) determines the AFC characteristic (holding range and slope) FMOsc FM oscillator tank circuit input, recommended load impedance approximately 3 kW VRef Regulated voltage output (2.4 V) FMtank FM RF tank circuit connection, recommended load impedance approximately 3 kW AMtank AM RF tank circuit connection, recommended load impedance approximately 20 kW FM-AGC FM AGC voltage output, time constant (C20). Loading this pin by a resistor (to GND) will increase the FM AGC threshold, grounding this pin will switch off the FM AGC function FMin FM RF input (common-base preamplifier transistor), recommended (RF) source impedance approximately 100 W FE-GND FM front-end ground AM/FM AM/FM IF output IFout (collector output of the IF preamplifier) Mode ctrl Mode control input: switch Pin | Function open | FM Ground | AM VS (R4 = 10 kW) | Tape AM-IFin AM IF input, input impedance = 3.1 kW FM-IFin FM IF input, input impedance = 330 W VTreble in Treble control voltage input LED drive Level indicator output (open-collector output, LED drive) IF-GND IF ground AFC switch AFC function control input: Pin | Function open | AFC off Ground | fOSC > fin VS | fOSC < fin VAGC/AFC AGC/AFC voltage, time constant adjust (C10), input impedance approximately 42 kW AM/FM AM/FM detector output, the load capacitor detect (C11) in conjunction with the detector output resistance (7.5 kW) determines the (FM) deemphasis as well as the (modulation) frequency response of the AM detector AFin Audio amplifier input, input resistance approximately 100 kW, coupling capacitor (C9) determines the low frequency response Ripple in Ripple filter connection. Load capacitance (C12) determines the frequency response of the supply-voltage ripple rejection VS Supply voltage input AFout Audio amplifier output AF-GND Ground of the audio power stage Symbol AMOsc
Pin Description
Mute 1
FM-discr
2
27
AFout
7 8 9 10 11
CF
3
26
VS Ripple in
Vol ctrl in
4
25
AMOsc
5
24
AFin 12
FM-AFC FMOsc
6
23
AM/FM detect
7
22
VAGC/AFC
13 14 15
VRef FMtank
8
21
AFC switch
9
20
IF-GND 16 17 18 19 20 21
AMtank
10
19
LED drive
FM-AGC FMin
11
18
VTreble in FM-IFin
12
17
FE-GND AM/FM IFout
13
16
AM-IFin Mode ctrl switch 22 23
14
14812
15
Figure 2. Pinning
Pin 1 Symbol Mute Function Mute voltage output, time constant (C23), mute depth and threshold adjustable by load resistance (R3) FM discriminator filter connection, ceramic resonator or equivalent LC-circuit Audio negative feedback input. Blocking capacitor (C8) determines the audio amplifiers low-end cut-off frequency Input for volume control voltage
24
2 3
FM-discr CF
25
4
Vol ctrl in
26 27 28
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TEMIC Semiconductor Rev. A1, 06-Apr-98
U2510B
Terminal Voltages
Test circuit: Vin = 0 Voltage/V Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 Mute voltage (R3 = 0) FM discriminator Negative feedback Volume control input (S4 = A) AM oscillator FM AFC FM oscillator VRef FM RF tank AM input FM AGC FM input Front end ground AM/FM IF output Mode control switch AM IF input FM IF input Treble control input (S5 = A) LED IF ground AFC switch (S3 = off) AGC (AM)/AFC (FM) Detector output AF input Ripple filter Supply voltage AF output AF ground Symbol V1 V2 V3 V4 V5 V6 V7 V8 V9 V10 V11 V12 V13 V14 V15 V16 V17 V18 V19 V20 V21 V22 V23 V24 V25 V26 V27 V28 AM - - 1.2 2.4 2.4 - - 2.4 - 2.4 - VS = 3 V FM 1.6 1.0 1.2 2.4 - 1.9 2.4 2.4 2.4 - 0 1.4 - - 2.9 2.7 0 - 0 - - 0.7 2.4 2.4 0 1.2 1.5 1.5 1.5 2.7 3.0 1.2 0 0 1.2 1.2 1.2 1.5 2.7 3.0 1.2 0 TAPE - - 1.2 2.4 - - - 2.4 2.4 - - - - - 2.9 - - 2.4 0 1.2 - - 1.5 2.7 3.0 1.2 0 AM - - 2.6 2.4 2.4 - - 2.4 - - - - - 5.9 0 0 - 2.4 0 1.2 1.5 1.5 1.5 5.3 6.0 2.6 0 VS = 6 V FM 1.6 1.0 2.6 2.4 - 1.9 2.4 2.4 2.4 2.4 0 1.4 - 5.7 - - 0.7 2.4 0 1.2 1.2 1.2 1.5 5.3 6.0 2.6 0 TAPE - - 2.6 2.4 - - - 2.4 - - - - - - 5.7 - - 2.4 0 1.2 - - 1.5 5.3 6.0 2.6 0
TEMIC Semiconductor Rev. A1, 06-Apr-98
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U2510B
Absolute Maximum Ratings
Parameters Supply voltage Power dissipation Ambient temperature range Symbol VS Ptot Tamb Value 13 900 -20 to +75 Unit V mW C
Electrical Characteristics
VS = 6 V, Tamb = 25C, test circuit (figure 16), unless otherwise specified Parameters Supply voltage range Oscillator stop voltage Operating temperature range Supply quiescent current Test Conditions / Pins Symbol VS VS T Min. 2.5 2.2 -20 Typ. Max. 9* +75 4.0 6.5 2.2 2.4 Unit V V C mA mA mA V
Vi1 = Vi2 = V4 = 0; AM (S2 = AM) IS IS FM (S2 = FM) TAPE (S2 = Tape) IS Regulated voltage Pin 8 VRef Audio amplifier Vi3 (Pin 24), test point: Vo (Pin 27) f = 1 kHz AF measuring range: 30 Hz to 20 kHz, S2 = Tape, S4 = A, S5 = A Input resistance Pin 24 Rj Closed loop voltage gain GVaf1 = 20 log (Vo/Vi3) Vi3 = 10 mV GVaf1 Output voltage Vi3 = 100 mV, S4 = B Vo High-end cut-off frequency fc (-3 dB) fc S5 = B fc Supply-voltage rejection ratio SVRR = 20 log (Vhum/Vo) Vhum = 200 mV, fhum = 200 Hz, S4 = B SVRR Noise voltage S4 = B, Vi3 = 0 Vn AF output power THD = 10 %, RL = 8 W VS = 4.5 V Po VS = 6.0 V Po VS = 9.0 V Po Distortion Po = 50 mW, RL = 8 W d
100 40 0.7 13 0.8
kW dB mV kHz kHz
3
32 300 225 420 1000 0.6
1000
mV
mW mW mW %
dB
400
FM section, Vi2 = 60 dBmV, fi2 = 98 MHz, fm = 1 kHz, dev. = 22.5 kHz, fiIF = 10.7 MHz, AF measuring range: 300 Hz to 20 kHz, S2 = FM, S1 = A, S6 = B, test point: VD (Pin 23) FM front-end voltage gain GVFM = 20 log (ViIF / Vi2) S1 = B, Vi2 = 40 dbmV GVFM 30 Recovered audio voltage Pin 23 VD af 85 Detector output resistance Pin 23 RDo 7.5 Detector output distortion dev. = 75 kHz THD 0.5 Vi2 = 60 dBmV THD 0.8 Vi2 = 105 dBmV
"
"
dB mV kW % %
*
U2510B-M__T: max. 6 V
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TEMIC Semiconductor Rev. A1, 06-Apr-98
U2510B
Electrical Characteristics (continued)
VS = 6 V, Tamb = 25C, test circuit (figure 16), unless otherwise specified Parameters AM rejection ratio RF sensitivity Limiting threshold (-3 dB) Mute voltage Test Conditions / Pins m = 30% (S+N)/N = 26 dB (S+N)/N = 46 dB Test point: Mute Vi2 = 0 Vi2 = 60 dBmV Referred to V0 at Vi2 = 0 S6 = A S6 = C fOSC > fin, S3 = A, S6 = A Vi2 10 dBmV Vi2 = 20 dBmV Vi2 = 80 dBmV Symbol AMRR Vi2 Vi2 Vi2 Vmute Vmute MD MD FHR FHR FHR Min. Typ. 25 9 22 3 1.8 0.4 26 20 no AFC 180 220 5.5 180 Max. Unit dB dBmV dBmV dBmV V V dB dB
Mute depth
AFC holding range
x
LED current ILED Oscillator voltage eZload = 2.5 kW Pin 7 VOSC AM section Vi1 = 60 dBmV, fi1 = 1.6 MHz, fm = 1 kHz, m = 30%, fiIF = 455 kHz, AF measuring range: 300 Hz to 20 kHz, (S2 = AM, S1 = B, test point: VD) AM front end voltage gain GVAM = 20 log (ViIF/Vi1) GVAM Vi1 = 20 dBmV, S1 = A Recovered audio voltage VD af1 Detector output resistance Pin 23 RDo Detector output distortion Vi1 = 60 dBmV THD Vi1 = 105 dBmV THD RF sensitivity (S+N)/N= 10 dB Vi1 (S+N)/N= 26 dB Vi1 (S+N)/N= 46 dB Vi1 AGC figure of merit referred Vi1 = 105 dBmV, voltage to VD af drop (VD af) = -10 dB FOM IF input resistance Pin 16 Zi LED current ILED Oscillator voltage Pin 5 VOSC
" "
kHz kHz mA mV
25 70 7.5 1 3 0 16 35 100 3.1 5.5 160
dB mV kW % % dBmV dBmV dBmV dB kW mA mV
TEMIC Semiconductor Rev. A1, 06-Apr-98
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U2510B
10 Tamb=25C 8 1000 6 AM 4 Tape 2 0 2
9510396
10000 FM
Po ( mW )
IS ( mA )
RL=4W 100 8W 16W 32W 10 f=1kHz d=10% Tamb=25C
4
6
8 VS ( V )
10
12
9510399
0
10 VS ( V )
50
Figure 3. Quiescent current
50 40 VU ( dB ) without treble control
Figure 6. AF section: Max. output power
40
32 30 with treble control 20 10 0 0.01
95 10397
f=200Hz
Po ( mW )
f=100Hz 24 Vhum=200mV VS=6V RL=8W Tamb=25C 2 4 6 8 VS ( V ) 10 12
Vi=5mV VS=6V RL=8W Tamb=25C 0.1 1 f ( kHz ) 10 100
95 10400
16
Figure 4. AF section
10 f=1kHz Tamb=25C 8
Figure 7. AF section: Supply-voltage rejection ratio
2.0 VS=6V Tamb=25C 1.6 Vo ( dBV ) R3= 1.2 100kW 0.8 68kW 0.4 0 -20
95 10403
d(%)
6 VS=3V RL=32W 4 2 0 1 10 100 Po ( mW ) 1000 10000 VS=6V RL=8W VS=9V RL=8W
0
20
40
60
80
100 120
95 10398
Vi ( dBmV )
Figure 5. AF section: Distortion
Figure 8. FM section: Mute voltage
6 (15)
TEMIC Semiconductor Rev. A1, 06-Apr-98
U2510B
0 S+N(m=80%) -20 S+N(m=30%) -40 N VS=6V fi1=1.6MHz fAF=1kHz Tamb=25C I LED ( mA ) VD ( dBV ) 5 4 3 2 1 d(m=80%) -100 -20
95 10404
6 AM FM ILED
-60 -80
d(m=30%) 0 40 60 80 100 120
95 10407
VS=6V Tamb=25C 0 20 40 60 80 100 120
0
20
Vi ( dBmV )
Vi ( dBmV )
Figure 9. AM section: Demodulator output level
0 VS=6V Vi3=10mV fAF=1MHz fAF=10kHz Tamb=25C Treble Voltage V8
Figure 11. AM/FM level indicator current
2.0
-20 VO ( dBV )
1.2 VAGC ( V )
-40
0.8 VS=6V fi1=1.6MHz Tamb=25C
-60 Treble Voltage = 0 -80 0
95 10406
0.4
0 0.5 1 1.5 V4 ( V ) 2 2.5
95 10408
20
0
20
40
60
80
100
120
Vi ( dBmV )
Figure 10. Volume control range characteristics
Figure 12. AM section: AGC voltage (at Pin 22)
TEMIC Semiconductor Rev. A1, 06-Apr-98
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U2510B
0 S+N(Df="75kHz) VS = 6 V fi2 = 98 MHz fAF = 1 kHz Tamb = 25C
-20 VD ( dBV )
S+N(Df="22.5kHz) AM(m=30%)
-40
-60 -80 -100 -20
N
d(Df="75kHz) d(Df="22.5kHz)
0
20
40
60
80
100
120
95 10401
Vi ( dBmV )
Figure 13. FM section: Demodulator output level
0 68kW 100kW Vo ( dBV ) -40 R3=0 -20 AM S+N VS = 6 V RL = 8 W Po = 50 mW at Vi2 = 60 dBmV fi2 = 98 MHz fAF = 1 kHz Df = kHz mAM = 30% Tamb = 25C
-60 N -80 d -100 -20 0 20 40 60 80 100 120
"22.5
95 10402
Vi ( dBmV )
Figure 14. FM section: Audio output level
0 S+N -20 VO ( dBV )
-40 N d -60 -80 -100 -20 Po = 50 mW at Vi1 = 60 dBmV RL = 8 W fi1 = 98 MHz fAF = 1 kHz m = 80% Tamb = 25C 100 120
0
20
40
60
80
95 10405
Vi ( dBmV )
Figure 15. AM section: Audio output level
8 (15)
TEMIC Semiconductor Rev. A1, 06-Apr-98
U2510B
Test Circuit
R5 150 Vi1 (50 ) Vi2 (50 ) R6 C24 LA 150 H C2 43 pF C3 22 pF L1 L2 C4 18 pF R4 2.2 k T2 C5 22 pF A S4 B A S5 B
100 100 nF C25 R
7
C7
C6 C19 5.6 pF
T4 C25 100 pF C8 4.7 F C24 18 pF 2 1
R8 50
75
R3 150 k C23 68 nF C S6
10 nF
4.7 F 22 nF
B A Vmute
C20 22 nF AM IFT T1 455 kHz CF1 14 13 12 11 10 9 8 7 6 5 4
3
U2510B
15 BA S1 B 16 A CF2 10.7 MHz R1 390 R2 10 k C14 C10 C11 10 nF C12 C13 RL 8 / 2W Vo GND
13913
17
18
19 C22
20
21
22
23 C9
24
25
26
27
28
A
S3 B 10 nF C15 220 F
D1
10 nF off LED
ViIF R9 3 k C21
Tape S2 FM AM
100 nF 10 F
10 F 470 F
10 nF ILED VD Vi3 VS
Figure 16. Test circuit
Application
General
The U2510B is a bipolar monolithic IC for use in radio sets, for example, headphone receivers, radio recorders and clock radios. The IC contains all AM, FM, AF and switching function blocks necessary to construct these kinds of radio receivers using only few components around the IC. In the design, special efforts were made to get good performance for all AM bands (short and long wave). The implementation of enhanced functions (options) makes it possible to improve the radio's performance and to produce radios with interesting features. In this case few (external) parts have to be changed or added. By using all or some of the options offered by the U2510B different types or classes of radios can be designed to the customer's requirements with the same IC. One of the general advantages of using the U2510B is the fact that all receiver functions (including the options) are integrated and tested on a system level. Therefore, two additional cost-savings are achieved by: 1. Shorter development time through less technical problems and 2. Higher reproductivity and low reject level in the set production line. Another advantage, due to the technology of the U2510B, is the wide operating voltage range, especially the upper limit (13 V). This feature allows the use of soft power supply for line powered radios which can also reduce the set's total cost.
TEMIC Semiconductor Rev. A1, 06-Apr-98
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U2510B
Circuit Example
Figure 17 shows a circuit diagram for low end AM/AF radios using the U2510B. Figure 18 shows a circuit diagram of AM/AF radio for higher class designs using all possible options of the U2510B. The layout of the PC board, shown in figure 19, is suitable for both the circuit example shown in figure 17 and the circuit example shown in figure 18. The associated coil, varicon and filter specifications are listed in the table: COIL DATA and SPECIAL COMPONENT PARTS. The circuit diagram (figure 18), has the following options compared to the circuit diagram (figure 17) (the additional parts, which have to be provided, are listed in parentheses): a) Soft mute and high cut control in FM mode (1 cap.) b) Electronic treble control in AM, FM and TAPE mode (1 pot.) c) On-chip mode control for TAPE application d) RF AGC in FM mode (1 capacitor) e) AFC, adjustable to the correct polarity and slope (1 cap.) f) Tuning indication using LED as an indicator (1 LED, 1 cap.) Option a) reduces the interstation noise by the two functions: soft mute and HCC. Both are controlled by the mute voltage (Pin 1). The soft mute reduces the loudness only, while the HCC reduces the high-end audio cut-off frequency of the audio preamplifier, when the signal level falls below a given threshold. This signal level threshold as well as the mute depth can be reduced by adding a resistor (R3) or by increasing the FM front-end gain. Option b) allows the treble control for all operating modes without the need of an additional capacitor. This concept leads to a smooth and correct treble control behavior which is an improvement compared to the controlled RC network normally used. Option c) is very useful for application in radio cassette-recorders, for instance. In TAPE mode, the AM/FM receiver blocks are completely switched off and the signal from the tape recorder can be fed to the audio amplifier's input directly. This saves quiescent current and makes the TAPE switching easy. However, to minimize switching noise by the mode switch, the following switch sequence should be chosen: AM, FM, TAPE. Option d) improves the strong signal behavior by protecting the FM mixer against overload. This is provided by the integrated broad-band-width RF AGC. If necessary, the AGC threshold can be decreased by a resistor, loading Pin 11 to GND (not shown). Option e) improves the tuning behavior substantially. The special design of the on-chip AFC function means that common disadvantages such as asymmetrical slope, (chip-) temperature effects and unlimited holding range are avoided. As mentioned in the "Pinning Description Table", the AFC slope has to be inverted when the local oscillator (LO) frequency has to be below the receiving frequency. This can be achieved by connecting Pin 21 to the potential of Pin 8. In addition to the options described above, the following proposals are implemented in the circuit diagram (figure 18), too:
D An FM IFT is applied. This improves the channel
selectivity and minimizes substantially the spurious responses caused by the FM ceramic filter (CF2). With the choice of the winding ratio of this IFT, the FM front end gain can be matched to other values if necessary.
D In the FM RF input section, the low cost antenna filter
(L5, C15) is replaced by a special band pass filter (PFWE8). Such a BPF protects the FM front end against the out-off-band interference signals (TV channels, etc.) which could disturb the FM reception.
Design Hints
The value of the power supply blocking capacitor C13 should not be below 470 mF. In addition, this capacitor should be placed near Pin 26. This will help to avoid unacceptable noise generated by noise-radiation from the audio amplifier via the bar-antenna. In designs, where the supply voltage goes below 2.5 V, the value of the blocking capacitor (C7) should be chosen as 47 mF or even higher. To achieve a high rejection of short wave reception in medium wave operation, the LO amplitude at Pin 5 should not exceed approximately 200 mV. This LO amplitude depends on the LO transformer's Q and its turns ratio. For the LO transformer type described in the "Coil Data Table", a resistor R4 (2.2 kW for example) in parallel to the secondary side of the AM LO transformer T2 is recommended. To minimize feedback effects in the RF/IF part in FM mode, the capacitor C6 should be placed as near to Pins 8 and 20 as possible. As shown in the application circuit diagrams (figures 17 and 18), in FM mode ceramic filter devices are used for channel selection (CF2) while for FM, demodulation in LC-discriminator circuit (T4, C24, C25) is used instead of a ceramic discriminator device. Such an LC discriminator circuit can be easily matched to the FM IF selectivity block by its alignment. The zerocrossing of the discriminator can be detected at the demodulator output (Pin 23). The zero-crossing voltage is equal to half of the regulated voltage at Pin 8.
10 (15)
TEMIC Semiconductor Rev. A1, 06-Apr-98
U2510B
The alignment of the LC-discriminator circuit should be done with little or no effect on the AFC function. This can be realized by: - switching Pin 21 to open-circuit - connecting Pin 1 to a voltage source of 2 V - using a low signal level for alignment. In general, ceramic discriminator devices can be used, too. In this case, the effect of unavoidable spreads in the frequency characteristics of these case ceramic devices in conjunction with the IC characteristic has to be considered. For example, mismatches of the characteristics between selectivity block and FM discriminator will lead to an increased signal-to-noise ratio at low signal level as well as to a higher demodulation distortion level or to an asymmetrical AFC.
Application Circuits
Antenna FM AM L3 C16 33 pF C18 33 pF C17 33 pF L4 C7 C6 T4 C25 100 pF C2 2 pF C3 22 pF L1 L2 C4 27 pF T2 C5 6 pF Volume P1 50 k
4.7 F 22 nF C8 4.7 F AM IFT T1 455 kHz CF1 14 13 12 11 10 9 8 7 6 5 4 3 C24 18 pF 2 1
U2510B
15 16 CF2 10.7 MHz R1 390 10 nF 100 nF C14 S2 C10 AM FM 4.7 F 10 nF 4.7 F 470 F C11 C12 C13 17 18 19 20 21 22 23 C9 C15 220 F S1 24 25 26 27 28
VS Z=8
13915
Figure 17. Application circuit (low cost)
TEMIC Semiconductor Rev. A1, 06-Apr-98
11 (15)
U2510B
Antenna FM AM L3 C2 2 pF C3 22 pF L1 L2 C4 27 pF T2 C5 6 pF P1 50 k P2 50 k Volume Treble
BPF 1
R4 2.2 k C7 C6
T4 C25 100 pF C23 C19 5.6 pF C8 4.7 F 5 4 3 C24 18 pF 2 (R3) 68 nF 1 Mute Adj.
4.7 F 22 nF C20 22 pF AM IFT T1 455 kHz CF1 14 13 12 11 10 9 8 7 6
U2510B
AM IFT T3 15 16 CF2 10.7 MHz 100 pF D1 R2 Tape FM S2 AM C21 10 nF IN Tape
13914
17
18
19 C22
20
21
22
23 C9 22 nF
24
25
26
27
28
10 nF LED
100 nF C14 C10 10 F C11 10 nF C12 C13
C15 220 F
S1
VS
10 k
4.7 F 470 F
Figure 18. Application circuit (upgraded) R2 only if VS > 8 V
Figure 19. PC-board
12 (15)
TEMIC Semiconductor Rev. A1, 06-Apr-98
U2510B
Coil Data and Special Component Part
Part Stage L or C0 between 180 pF 1 to 3 Q0 between Wire diameter/mm Terminal No. Number of turns 0.07 2 to 3 35 0.06 4 to 6 29 0.09 2 to 3 7 0.09 4 to 6 2 Type Manufacturer 0.07 4 to 6 7 7MC-7789N Toko 21K7-H5 Mitsumi 7TRS-8441 Toko L-5K7-H5 Mitsumi mat.: 7P A119 AC Toko mat.: 7P A119 AC Toko
T1
AM IFT
90 1 to 3
0.07 1 to 2 111 0.06 1 to 3 107 0.09 1 to 2 3 0.09 1 to 3 10 0.62 3.75 0.62 3.75 0.62 4.75
T2
AM OSC
270 mH 1 to 3
125 1 to 3
T3
FM IFT (optional) FM discriminator FM RF air coil 4 mm diam. FM OSC air coil 4 mm diam. FM antenna air coil 4 mm diam.
100 pF 1 to 3 100 pF 1 to 3
T4
L1
L2
L4
L3 BPF1 CF1 CF2 CF3 C1
AM bar antenna (optional)
(optional) Variable capacitor
4 mm 3 2 4 6 4
L: 630 mH total turns : 96 tap: 19 PFWE8 (88 to 108 MHz) Soshin Electric Co. SFU-455B Murata BFCFL-455 Toko SFE10.7MA5 Murata CFSK 107M1 Toko CDA10.7MC1 Murata HD22124 AM/FM Toko
3 mm 80 mm
18 mm
C1
Pin 10
Pin 8
13931
Coil, bottom view
Air coil
Figure 20.
AM bar antenna
TEMIC Semiconductor Rev. A1, 06-Apr-98
13 (15)
U2510B
Package Information
Package SDIP28
Dimensions in mm
27.5 27.1 10.26 10.06 4.8 4.2 0.9 3.3 0.53 0.43 23.114 1.778 0.35 0.25 12.2 11.0 8.7 8.5
1
technical drawings according to DIN specifications 13044
14 (15)
TEMIC Semiconductor Rev. A1, 06-Apr-98
U2510B
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC Semiconductor GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
TEMIC Semiconductor Rev. A1, 06-Apr-98
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